Building on in-house fabricated devices, we have recently demonstrated the ability to shuttle electrons between gate defined quantum dots in Si/SiGe over 20 micron-scale distances using only four different AC-voltages, independent of the distance covered [Nat. Commun. 15, 2296 (2024)].
Theoretical consideration and experimental demostrations indicate good prospects for maintaining spin-coherence of the shuttled electron [Nat. Commun. 15, 1325 (2024)] which makes this approach very promising for scaling up semiconductor spin qubit devices [Nature 653, 360 (2026)]. This position focuses on experimentally demonstrating coherent spin shuttling, shuttling-compatible high-fidelity qubit control and further ingredients for a shuttling-based architecture, using devices from academic or industrial fabrication. Key activities can include:
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