In this Master thesis, Si/Ge spin qubits will be studied through cryogenic scanning-transmission electron microscopy, (S)TEM. Electron transparent TEM lamellae will be extracted from the actual spin qubit device by advanced focused ion beam (FIB) and inserted in the TEM for first, optimized of lamella quality and thickness, and second, study of strain. The scientific goal is to unveil the effect that gate configurations have in quantum devices to strain and disorder. Strain will be measured through different techniques such as geometrical phase analysis and 4D STEM, and comparisons will be established between room temperature and cryogenic temperatures with dedicated and unique liquid helium TEM holders.
At the end of the project, the student will develop knowladge and master the following habilities:
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